skkh 57/18 e g6 ? by semikron rev. 0 ? 19.01.2009 1 semipack ? 1 skkh thyristor / diode modules skkh 57/18 e g6 features ? heat transfer through aluminium oxide ceramic isolated metal baseplate ? hard soldered joints for high reliability ? ul recognized, file no. e63532 typical applications ? dc motor control (e . g. for machine tools) ? ac motor soft starters ? temperature control (e. g. for ovens, chemical processes) ? professional light dimming (studios, theaters) absolute maximum ratings symbol conditions values unit chip i t(av) sinus 180 t c =85c 55 a t c = 100 c 41 a i tsm 10 ms t j =25c 1500 a t j = 130 c 1200 a i 2 t 10 ms t j =25c 11250 ka 2 s i 2 t t j = 130 c 7200 ka 2 s v rsm 1900 v v rrm 1800 v v drm 1800 v (di/dt) cr t j = 130 c 140 a/s (dv/dt) cr t j = 130 c 1000 v/s t j -40 ... 130 c module t stg -40 ... 125 c v isol a.c.; 50 hz; r.m.s. 1min 3000 v 1s 3600 v characteristics symbol conditions min. typ. max. unit chip v t t j =25c, i t = 180 a 1.5 1.75 v v t(to) t j = 130 c 0.85 1 v r t t j = 130 c 4.00 4.80 m ? i dd ;i rd t j = 130 c, v dd = v drm ; v rd = v rrm 20 ma t gd t j =25c, i g =1a, di g /dt = 1 a/s 1s t gr v d = 0.67 * v drm 2s t q t j = 130 c 170 s i h t j =25c 150 250 ma i l t j =25c, r g =33 ? 300 600 ma v gt t j =25c, d.c. 2.5 v i gt t j =25c, d.c. 100 ma v gd t j = 130 c, d.c. 0.25 v i gd t j = 130 c, d.c. 4ma r th(j-c) cont. per chip 0.470 k/w per module 0.235 k/w r th(j-c) sin. 180 per chip 0.490 k/w per module 0.245 k/w r th(j-c) rec. 120 per chip 0.510 k/w per module 0.255 k/w module r th(c-s) chip 0.22 k/w module 0.11 k/w m s to heatsink m5 4.25 5.75 nm m t to terminals m5 2.55 3.45 nm a 5 * 9,81 m/s 2 w75g
skkh 57/18 e g6 2 rev. 0 ? 19.01.2009 ? by semikron fig. 1l: max. power dissipation per chip vs. on-state current fig. 1r: max. power dissipation per chip vs. ambient temperature fig. 2l: max. power dissipation of one module vs. rms current fig. 2r: max. power dissipation of one module vs. case temperature fig. 3l: max. power dissipation of two modules vs. direct current fig. 3r: max. power dissipation of two modules vs. case temperature
skkh 57/18 e g6 ? by semikron rev. 0 ? 19.01.2009 3 fig. 4l: max. power dissipation of three modules vs. direct current fig. 4r: max. power dissipation of three modules vs. case temperature fig. 5: recovered charge vs. current decrease fig. 6: transient thermal impedance vs. time fig. 7: on-state characteristics fig. 8: surge overload current vs. time
skkh 57/18 e g6 4 rev. 0 ? 19.01.2009 ? by semikron this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. fig. 9: gate trigger characteristics skkh semipack 1
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